Study on the local barrier field variations for electron tunneling in field ionization at a step edge of W(112) with a micro-probe hole field ion microscope
نویسندگان
چکیده
منابع مشابه
A Time-of-flight Atom-probe Field-ion Microscope for the Study of Defects in Metals
An ultra-high vacuum time-of-flight (TOF) atom-probe field-ion microscope (FIM) specifically designed for the study of defects in metals is described. Performance experiments show that this instrument can clearly resolve the seven stable isotopes of molybdenum, the five stable isotopes of tungsten, and the two stable isotopes of rhenium in a tungsten-25at.% rhenium alloy. The entire process of ...
متن کاملmetallicity of starburst galaxies in chandra deep field south (cdf-s) , at 0.5
چکیده یکی از پارامترهای اصلی در دنبال کردن تاریخچه ی تشکیل ستاره ها و تحول کهکشان ها، مطالعه ی میزان فراوانی عناصر آن ها است. در این پایان نامه برای مطالعه ی همبستگی میان فراوانی فلزی و جرم ستاره ای کهکشان ها، از داده های طیفی 89 کهکشانِ ستاره زا استفاده شده است. طیف ها توسط طیف نگار فورس2 از میدان ژرف جنوبی چاندرا گرفته شده و جابه جایی به سرخ طیف ها همه بزرگتر از نیم و کوچکتر از یک هستند. جر...
15 صفحه اولfabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Engineering the Electron-Hole Bilayer Tunneling Field- Effect Transistor
The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...
متن کاملSelf-Fields Effects on Gain in a Helical Wiggler Free Electron Laser with Ion-Channel Guiding and Axial Magnetic Field
In this paper, we have investigated the effects of self-fields on gain in a helical wiggler free electron laser with axial magnetic field and ion-channel guiding. The self-electric and self-magnetic fields of a relativistic electron beam passing through a helical wiggler are analyzed. The electron trajectories and the small signal gain are derived. Numerical investigation is shown that for grou...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2020
ISSN: 0021-4922,1347-4065
DOI: 10.7567/1347-4065/ab5fef